Smart strain sensors based on MOS transistors
Strain gauges for smart metrology
The UCLouvain solution
The classical strain gauges sensors consist of piezoresistive metallic resistances mounted in
a Wheatstone bridge configuration on a 100 μm-thin polyimide film, with a dedicated
interface. These typically consume mW’s of power at several V’s supply voltage.
The UCLouvain smart strain sensor exploits an innovative way to measure strain with ultralow
power consumption, using piezoresistance in active devices, i.e. with
perpendicular PMOS transistors in current mirror configurations, designed for high
We are currently working to make the sensor autonomous through a passive RFID solution.
Key-figures of the invention
TRL 3, proof-of-concept demonstration and comparison with reference strain gauges
First results published in Al Kadi Jazairli, M. et al., “Ultra-low-power 130nm SOI CMOS
smart sensor for in-situ mechanical stress in SiP and SoC applications”, 2016.
Validation of the technology in real test situations (joint case studies)
Interested to validate and develop this technology?
Technology Transfer Advisor
Professor in Electrical Engineering